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VOL. 7, ISSUE 2 (2022)
Theoretical modelling of electrical conductivity in metal oxide thin films using temperature-dependent carrier dynamics
Authors
Ajit Singh
Abstract
This work includes a coherent theoretical model to simulate the
temperature dependent electrical conductivity of metal oxide thin films through
the combination of various carrier accommodation processes at low, intermediate
and high temperature conditions. It uses the model Mott Variable-range hopping
(VRH), Small Polaron Hopping (SPH), Arrhenius-type thermally activated
conduction and high-temperature band conduction to explain the slow change in
charge transport behaviour. Carrier concentration, mobility, defect states and
scattering processes both depend on temperature were mathematically
interpolated with weighted contributions of the carrier mechanisms of
conduction allowing continuity and realistic predictions of conductivity.
Findings indicate that at 50150 K, VRH is prevalent, 150 350 K SPH controlled
transport, and 350 K strong band conduction, all are expected based on
previously known activation energies and dynamics driven by defects in metal
oxides. The integrated model offers a detailed account of the microstructural
disorder, phonon interactions, and thermal activation to mainly conductivity in
large temperature variations and can be of great benefit in designing stable
and high-performance oxide-based electronic and sensing devices.
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Pages:84-91
How to cite this article:
Ajit Singh "Theoretical modelling of electrical conductivity in metal oxide thin films using temperature-dependent carrier dynamics". International Journal of Advanced Science and Research, Vol 7, Issue 2, 2022, Pages 84-91
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