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VOL. 10, ISSUE 1 (2025)
Electrical and structural evaluation of different MOSFET designs
Authors
Lokeshwar Patel, Subodh Dewangan
Abstract
The cornerstone of the electronics industry is
the invention of the transistor. Nano electronics technology has advanced
thanks in large part to Metal Oxide Semiconductor Field Effect Transistors
(MOSFETs). In this study, some of the most widely used MOSFET structure designs
are briefly reviewed. Because to short channel effects and DIBL, the Moore's
Law-proposed scaling down of planar bulk MOSFETs has reached saturation.
Alternative methods to address the issues at lower node technologies have been
contemplated as a result. Two interesting options in this field are SOI and
FinFET technology.
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Pages:1-3
How to cite this article:
Lokeshwar Patel, Subodh Dewangan "Electrical and structural evaluation of different MOSFET designs". International Journal of Advanced Science and Research, Vol 10, Issue 1, 2025, Pages 1-3
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